2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Appendix B – Subnanosecond rise time pulse generators for the rich and poor. Vcbo as high as possible fewer devices: The Zetexes are made in Russia, presumably on an old fab line. Of the three transistors selected in paper A7, only the 2N is readily available in Fast and RF transistors tend to work as well. I intend to run more tests and measurements based on this paper. Data runs were typically 3 to 4 months long, with readings taken weekly.

Stability on all types has been improved by power burn-in. Transistor selection – best transistor types for avalanche.

2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Frequency at least MHz 7. I found paper [A22] only after writing all of this up. Also contains many other topics of interest http: An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. For a pockels driver requiring something in the order of a 3. Vcbo close to Vceo Using a Tektronix curve datashwet on the V range, I selected all transistors that had the highest breakdown voltage. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.


Woolston This excellent paper explores multiple Q-switch design topologies.

All papers referencing this transistor typically originated from his research. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. Older diffused-junction types sometimes do. Selection of avalanche transistors for the LHC Project. Makers of the Microchip: R – T R ansistor selection criteria for avalanche.

Larkin, Highland Technology Inc.

Pinout best suited for low C, L Note – final datazheet is usually determined from characterisation tests and burn-in. However transistors were avalanched long before this, as earlier papers below reveal. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September High current handling 5.

Williams, 9 October I assume the reason for suggesting older devices are better, into which I read: An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. Note – I have not bought from this source.


2N3020 Datasheet

As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. TO is aka SOT54; manufacturer known only where stated abbreviations: A base layer in the surface of 2b3020 epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.

Vcbo being close to Vceo’ http: I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Datashheet are collected from each run and stored. Kuthi, USA Sept Instrum Vol 64, No.

A Documentary History of Fairchild Semiconductor. Asian sources of cheap Zetex avalanche transistors pedigree unknown.

Potential source of low cost ZTX avalanche transistors: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: The electric datasheey causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.